High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation

Superior reliability of high mobility (Si)Ge channel pMOSFETs

0167-9317/$ see front matter 2013 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2013.03.001 ⇑ Corresponding author. E-mail address: [email protected] (J. Franco) With a significantly reduced Negative Bias Temperature Instability (NBTI), SiGe channel pMOSFETs promise to virtually eliminate this reliability issue for ultra-thin EOT devices. The intrinsically superior NBTI robustness of the ...

On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

Solution-processed amorphous silicon surface passivation layers

Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical...

Strained-Si on Si Ge MOSFET Mobility Model

A new electron mobility model for strained-Si MOSFETs has been developed. The mobility increase produced by the strain in the silicon layer is accurately studied and described by means of simple analytical expressions. This model can be easily included in conventional device and circuit simulators. The need of a surface-roughness model dependent on the germanium mole fraction is highlighted. Th...

Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress

Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6 passivation of Ge was utilized to form a high...